【摘要】 集成电路工业目前多使用如氮化钛、氮化钽等氮化物作为防止铜扩散的阻挡层。然而 ,在氟离子存在的情况下 ,铜、银和钯等金属离子会与氮化物发生自发性的置换反应 ,并造成金属的沉积。所沉积出的钯金属尽管被认为是污染物 ,但其可作为后续电镀铜工艺的晶种层。此外 ,利用化学镀技术可成功在活化后的二氧化硅上沉积出镍钼磷薄膜 ,该材料具有作为铜内联阻挡层及晶种层的潜力。通过原子力显微镜 (AFM)、电子显微镜 (SEM)、Auger电子显微镜 (AES)、X光绕射 (XRD)、四点探针 (4 pointprobe)及表面轮廓仪 (Alpha step) ,研究了镍钼磷薄膜的微观结构、沉积速率、组成及电阻率等。另外 ,通过直接镀铜及二次离子质谱仪的测量 ,初步确定了镍钼磷可作为阻挡层及晶种层的特性更多还原

【Abstract】 Nitride materials such as TiN and TaN have been used as barrier layers for Cu in IC industry. However, spontaneous displacement reaction was found to occur between nitride barriers and some metal ions such as Cu²⁺, Ag⁺ and Pd²⁺ in the presence of F^-, leading to the deposition of metal seeds. Despite being regarded as a contaminant, Pd was found to be capable of serving as the platform for subsequent Cu electrodeposition. In addition, a potential NiMoP barrier/seed layer for Cu interconnect was successfully formed via electroless deposition atop SiO₂ after activation. The crystal structure, deposition rate, composition and the electrical resistivity of NiMoP were investigated by atomic force microscope （AFM）, scanning electron microscope （SEM）, Auger electron microscope （AES）, X-ray diffraction （XRD）, 4-point probe, and surface profilometer （Alpha-step）. The barrier layer and seed layer functions of NiMoP were verified by direct Cu electrodeposition and secondary ion mass spectroscopy （SIMS）.更多还原