【摘要】 介绍了一种制备非致冷红外探测器阵列的新方法,此方法避免了使用传统的微电子机械系统(MEMS)工艺来加工微桥.研究了如何在Si基片表面形成ZnO膜层网格状结构的方法.ZnO纳米粉末和PLZT厚膜采用改进的溶胶-凝胶法制备.表征了ZnO纳米粉末的表面形貌和PLZT厚膜的相组成,测量了PLZT-8/53/47厚膜的铁电性和热释电性.结果表明,ZnO纳米粉末的粒径为40-70 nm,PLZT-8/53/47厚膜为纯钙钛矿相,其主结晶方向与底电极一致.PLZT-8/53/47厚膜具有优良的热释电性能,其热释电系数p为8.21×10-8C/(cm2·℃),而矫顽场较小,25℃时+Ec为32.0 kV/cm,40℃时+Ec仅为27.8 kV/cm.更多还原

【Abstract】 A novel process for fabricating uncooled infrared detector array was introduced, instead of traditional technique used in the field of microelectromechanical systems (MEMS) in order to making self-support microbridge structures. The gridding method of ZnO layers prepared on Si substrate was developed. Both ZnO nanometer powders and PLZT thick films were prepared by improved sol-gel process. ZnO nanometer powders were characterized by TEM and PLZT thick films were analyzed by XRD. The ferroelectric and pyroelectric properties of PLZT-8/53/47 thick films were measured and studied. The results showed that grain size of ZnO nanometer powders ranged from 40 to 70 nm, and pure perovskite PLZT-8/53/47 was found and crystallization of PLZT-8/53/47 thick films was same as bottom electrode in direction. The thick film has high pyroelectric coefficient and low coercive field. The pyroelectric coefficient p is 8.21×10-8C/(cm2· ℃), and the coercive field +EC is 32.0 kV/cm and 27.8 kV/cm, at 25 ℃ and 40 ℃ respectively.更多还原