【摘要】 用磁控溅射法制备了掺杂Sn的Ge₂Sb₂Te₅相变材料薄膜,研究了Sn含量对结晶性能的影响.薄膜的X射线衍射（XRD）表明,热处理使薄膜发生了从非晶态到晶态的相变,并出现Sn-Te相.通过示差扫描量热（DSC）实验测出在不同加热速率下非晶态薄膜粉末的结晶峰温度,计算了材料的结晶活化能.根据结晶动力学分析和结晶活化能数据,掺杂Sn后的Ge-Sb-Te具有更高的结晶速率,用于光存储时将具有更高的擦除速度.更多还原

【Abstract】 Sn-doped Ge₂Sb₂Te₅ thin films were prepared by RF-sputtering.The effect of Sn-content on their crystallization properties was studied by XRD and DSC.The XRD spectra of the films inthe as-deposited and heat-treated states showed that the films changed from amorphous to crystallinestates due to heat-treatment and Sn-Te phase appeared.Using DSC data of the amorphous filmmaterials,the activation energies were calculated by measuring the peak crystallization temperaturesat different heating rates.It was found that the Ge-Sb-Te-Sn samples have higher activation energyof crystallization than that of the Ge₂Sb₂Te₅ sample.It is concluded from these results that Sn-dopingcan increase the crystallization rate of the Ge₂Sb₂Te₅ phase-change material,and thereby increase theerasing speed of the material for rewritable optical storage.更多还原