【摘要】 用轮番溅射工艺在多靶磁控溅射设备上制备了SmCo薄膜。通过改变Sm,Co纯金属靶的溅射时间间隔和溅射功率来调整薄膜的化学成分和均匀性。实验表明,可以通过调整溅射电流来优化薄膜的化学成分。沿垂直膜面俄歇电子(AES)逐层分析证明,优化溅射工艺制备的薄膜化学成分分布均匀。电子衍射表明薄膜溅射态为非晶结构,经过400℃退火处理,薄膜开始晶化。VSM分析表明溅射态的薄膜为软磁特征。晶化后的薄膜表现为硬磁特征,450℃退火时薄膜的矫顽力最大,达80320A/m。薄膜呈现一定的各向异性。更多还原

【Abstract】 The SmCo films were deposited by magnetron sputtering equipment with turn sputtering. The composition and uniformity of the films were adjusted by varying the interval time and the sputtering power. EDAX analyses showed that the film composition can be optimized by controlling the sputtering current. The results of AES analyses proved that the optimized composition is uniform along the cross-sections of the film. TEM electron diffraction indicated that the structure of the as-deposited film is amorphous. After anneal at above 400℃ the film began crystalline. VSM results showed that theas-sputtered film is magnetically soft. After crystallization the film showed hard magnetic behavior. After annealing at 450℃ magnetic anisotropy developed and the coercivity of the film maximized.更多还原