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磁控溅射非晶CN_x薄膜的热稳定性研究
Thermal stability of magnetron sputtering amorphous carbon nitride films
【摘要】 为了研究非晶CNx薄膜的热稳定性,采用射频磁控溅射方法沉积了非晶CNx薄膜样品,并在真空中退火至900℃,利用FTIR,Raman和XPS谱探讨了高温退火对CNx薄膜化学成分及键合结构的影响.研究表明:CNx薄膜样品中N原子分别与sp、sp2和sp3杂化状态的C原子相结合,退火处理极大地影响了CN键合结构的稳定性;当退火温度低于600℃时,膜内N含量的损失较少,CNx薄膜的热稳定性较好,退火温度超过600℃时,将导致CNx膜中大多数C、N间的键合分离,造成N大量损失,膜的热稳定性下降;退火可促使膜内sp3型键向sp2型键转变,在膜中形成大量的sp2型C键,导致CNx膜的石墨化.
【Abstract】 In order to study thermal stability of amorphous carbon nitride films, R F magnetron sputtering method was used to deposit the samples which were annealed up to 900 ℃ in vacuum. Fourier Transformation Infrared, Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were carried out to investigate the variation in compositional and structural properties of the films. It is found that the nitrogen atoms are bound to sp, sp~2 and sp~3 hybridized carbon atoms in as-deposited films. Thermal stability of CN bonds in the CN_x films is closely related to annealing temperature. Annealing studies show that CN_x films have better thermal stability in the annealing temperature range of less than 600 ℃, while above 600 ℃ the CN_x films become very unstable. Annealing can lead to the disruptions of bonding between C and N atom and a significant nitrogen loss of the films with the increase of annealing temperature. As a consequence, a larger fraction sp~2 C bonding occurred while the graphitization evolved with thermal annealing in the CN_x films due to the conversion from sp~3 C to sp~2 C.
【Key words】 Carbon nitride films; annealing; thermal stability; bonding structure; magnetron sputtering;
- 【文献出处】 材料科学与工艺 ,Material Science and Technology , 编辑部邮箱 ,2004年01期
- 【分类号】O484
- 【被引频次】4
- 【下载频次】129