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Si3N4陶瓷材料的高温氧化理论及其抗氧化研究现状

The Ooxidation Theory and Developing State of Researches on Oxidation Resistance of Silicon Nitride at High Temperature

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【作者】 冯建基李国卿牟宗信张长瑞

【Author】 Feng Jian-ji1, Li Guo-qing1, Mu Zong-xin1, Zhang Chang-rui2 (1.State Key Laboratory for Materials Modification by ion, electron and Laser Beams, Dalian University of Technology1, 116023; 2. Changsha Defence University, 410011)

【机构】 大连理工大学三束材料改性国家重点实验室长沙国防科技大学 辽宁大连116024辽宁大连116024湖南长沙410011

【摘要】 从热力学、动力学和整体控速过程探讨了氮化硅陶瓷材料高温氧化理论和氧化性质,在空气中的热化过程, 因为PO2>Psio, 是纯化氧化过程,氧化产物为SiO2和N2。氧扩散是控制氧化速度的主导因素。氧在Al2O3中的高温扩散系数为10-15~10-14量级,而在SiO2中扩散系数为10-8量级,因此人们探索各种方法在Si3N4陶瓷表面改性以提高其抗氧化性能,其中, 制备金属氧化物的效果显著。在试验沉积Al2O3薄膜的基础上,讨论了Al2O3薄膜对氮化硅陶瓷抗氧化性能的作用,并且展望了精密氮化硅陶瓷表面形成具有良好结合力的金属氧化物-氧化硅混合结构表层的表面改性技术。

【Abstract】 This paper reviewed the high temperature oxidation theory of Si3N4 from thermodynamic, kinetics and controlling factors. The oxidation of Si3N4 in air is passive oxidation, Po2>PsiO, The production chemicals are SiO2 and N2, the diffusion coefficient of oxygen in SiO2 is the main controlling factor of oxidation rate. Due to Oxygen diffusion coefficient in Al2O3 is 10-15~10-14 , much more than that in SiO2 as 10-8, so many modification methods were investigated to increase the oxidation resistance, the technology of metal oxide coating is the best way. In this paper, based on the experience of depositing Al2O3 film on surface of Si3N4, the effect of Al2O3 film was discussed and the technique of forming mixed structures of SiO2 and metal oxides for precision ceramics parts of Si3N4 was looked forward..

【关键词】 氮化硅氧化理论表面改性
【Key words】 silicon nitrideoxidation theorysurface modification
【基金】 国防预研基金资助项目(项目编号略)
  • 【文献出处】 中国表面工程 ,China Surface Engineering , 编辑部邮箱 ,2004年04期
  • 【分类号】TQ174
  • 【被引频次】17
  • 【下载频次】448
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