【摘要】 提出了一种热氧化的方法来改善干法刻蚀硅波导的表面质量 .通过 Suprem二维工艺模拟程序对氧化过程的物理模型进行了分析 .用实验证实了该方法的可行性并与模拟结果进行了比较 .实验中将硅波导的表面粗糙度由6 5 .4 nm降低到了 8.8nm.另外讨论了分次氧化方法的利弊更多还原

【Abstract】 Presented is a method of thermal oxidation for minimizing surface roughness of silicon waveguide by dry etching processes.The model of oxidation is analyzed by SUPREM two-dimensional simulation.Experimental result is compared with simulation result and the method is validated.Surface roughness of silicon waveguide is reduced from 65.4nm to 8.8nm in the experiment.Oxidation by several times is discussed.更多还原