【摘要】 研究了以 C4 F8/SF6 /O2 为刻蚀气体 ,利用 ICP刻蚀技术制作 SOI脊形光波导过程中 ,刻蚀参数与侧壁粗糙度的关系 .实验结果表明偏压、气体比例、压强是影响侧壁粗糙度的关键参数 ,在低偏压、低 C4 F8/SF6 比和较高压强下更容易获得低粗糙度的侧壁 .通过优化刻蚀参数 ,获得了侧壁粗糙度和传输损耗相对较低的 SOI脊形波导更多还原

【Abstract】 The relationship between the side-wall roughness of SOI rib-waveguide etched by C 4F 8/SF 6/O 2 inductively coupled plasma (ICP) and the etching parameters is studied.The experimental results show that bias voltage,ratio of C 4F 8/SF 6 and pressure affect the side-wall roughness seriously.To minimize the roughness on waveguide sidewall,lower bias voltage,lower C 4F 8/SF 6 ratio and higher pressure etching condition are preferred.By optimizing the etching parameters,waveguides with smoother side-walls and smaller propagation loss are fabricated successfully.更多还原