【摘要】 在 12 5 m m标准 CMOS工艺线上 ,对标准 CMOS工艺经过一些必要的改动后 ,研制出了多叉指功率 Si GeHBT.该器件的 BVCBO为 2 3V .在较大 IC范围内 ,电流增益均非常稳定 .在直流工作点 IC=4 0 m A ,VCE=8V测得 f T为 7GHz,表现出较大的电流处理能力 .在 B类连续波条件下 ,工作频率为 3GHz时 ,测得输出功率为 31d Bm,Gp 为10 d B,且 PAE为 33.3% .测试结果表明 ,单片成品率达到了 85 % ,意味着该研究结果已达到产业化水平 .更多还原

【Abstract】 With modified necessary steps for SiGe implementation,multi-finger power SiGe H BT devices are fabricated in a CMOS process line with 125mm wafer.The devices s how quite high BV CBO 23V.The current gain is very stable over a wide I C.The f T is up to 7GHz at a DC bias of I C=40mA and V CE=8 V,which show high current handling capability.Under continuous conditions in B o peration,the 31dBm output power,10dB G p,and 33.3% of PAE are obtained at 3GHz .Based on extensive tests,it has been demonstrated that the yield on a wafer is up to 85%,which means that the research results are capable of commercialization .更多还原