【摘要】 采用钨丝掩模技术 ,通过调整制作过程中的工艺参数 ,研制出批量器件阈值在 2 m A以内 ,最低阈值为1.2 5 m A的 85 0 nm垂直腔面发射激光器 .同时对 TO封装的器件进行了高频特性测试 ,结果表明 3d B带宽最高为4 .0 GHz,在应用于光通信收发模块的商品化同类器件中处于较好的水平 ,适合中、高速光通信应用更多还原

【Abstract】 By optimizing the technology parameters,850nm vertical cavity surface emitting laser is fabricated by large i nclined angle implantation using tungsten as mask,which is continuous operating at room temperature.The threshold current is lowest to 1.25mA.The light output power is about 0.92mW.The modulation performance of the device in TO package in dicated that the -3dB bandwidth is 4.0GHz,which can be applied in middle and h igh-speed optical communication.更多还原