【摘要】 采用有限差分法对 Ga N基多量子阱 (MQWs)脊形激光器进行二维光场模拟 .In Ga N和 Al Ga N材料的折射率分别由修正的 Brunner以及 Bergm ann方法得到 .分析了激光器单模特性和远场发散角同器件的脊形刻蚀深度和脊形条宽的关系 .研究了在脊形上用 Si/ Si O2 膜取代传统 Si O2 介质膜这种新的脊形设计对激光器结构参数的影响 .模拟结果发现 ,脊形条宽越窄 ,脊形刻蚀深度越深 ,平行结平面方向的发散角越大 ,但由此会引起单模特性不稳定 ,两者之间有一个折衷值 .通过引入新的脊形设计 ,可以降低对器件刻蚀深度精度的要求 ,同时有很好的单模稳定性更多还原

【Abstract】 D finite difference method is used to simulate the optical field of GaN MQWs blue laser diode. The refractive index of InGaN and AlGaN is determined by the corrected Brunner method and the Bergmann method,respectively. The relation between the single transverse mode and divergence angle with the laser diode’s ridge width and the rigde etched depth is analyzed. A new ridge design is which Si/SiO 2 replaces traditional SiO 2 film on ridge is simulated. The simulation results show that the deeper the ridge is etched, the bigger the θ ∥ (divergence angle runing parallel with the junction) is. But deep depth of ridge etched causes the instability of the lasing mode because of the large Δ n . There is a trade off for etched depth between the large θ ∥ and the stability of lasing mode. The new ridge design makes the control of etching process easy and hase a good single mode at the same time.更多还原