【摘要】 分析了 PAE效应 (process antenna effect)的成因 ,并在此基础上提出了几种在深亚微米 ASIC设计中消除PAE效应的方法 .其方法应用于“龙芯 - I CPU”的后端设计 ,保证了投片的一次成功更多还原

【Abstract】 PAE (process antenna effect) is a phenomenon of plasma induced gate oxide degradation.It directly affects manufacturability of VLSI circuits,especially in deep submicron technology using high density plasma processes.Base on analysis of PAE,several estimating algorithms and solutions are provided.And these methods are adopted in the Godson-I CPU’s back-end design successfully.更多还原