【摘要】 采用四因素四水平的正交实验法优化了磁控溅射金属预置层后硒化法制备CuInSe2 薄膜的工艺条件 .调节四个较为重要的影响因素 ,即Cu/In比、硒化时间、硒化温度和硒源温度制备得到 16个CuInSe2 样品 .用Hall效应仪对薄膜的电学性能进行了研究 ,并且通过XRD研究了薄膜的结构性能 .得到了制备具有较好电学性能的CuInSe2 薄膜的优化条件为 :Cu/In比 1 133,硒化温度 4 2 0℃ ,硒化时间 2 0min ,硒源温度 2 0 0℃ .在此优化条件下得到的薄膜Hall迁移率可以达到 3 19cm2 /(V·s) ,XRD结果表明薄膜中没有杂相存在 .更多还原

【Abstract】 The optimized preparation of CuInSe 2 thin films by DC-magnetron sputtering the metal precursor followed by selenization is investigated by means of the four-factor and four-level orthogonal experimental method.In the experiments,four important factors including the ratio of Cu/In,the time of selenization,the temperature of selenization,and the temperature of selenium are changed,and then sixteen samples are fabricated.The electrical properties of the CuInSe 2 thin films are studied by the Hall effect measurement system.It is found that the optimized fabrication parameters of CuInSe 2 thin films with good electrical properties are that the ratio of Cu/In is 1.133,the time of selenization is 20min,the temperature of selenization is 420℃,and the temperature of selenium is 200℃.The Hall mobility of the CuInSe 2 film prepared under the optional conditions is 3.19cm 2/(V·s).X-ray diffraction (XRD) results indicat that the CuInSe 2 thin films are well crystallized,and there is no other phase in the film.更多还原