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高铝AlxGa1-xAs氧化层对垂直腔面发射激光器的影响
Effect of High Aluminum AlGaAs Oxidized Layers on Vertical-Cavity Surface-Emitting Lasers
【摘要】 针对可见光垂直腔面发射激光器的制备 ,通过湿氮氧化实验和测量微区光致发光谱分别研究了高铝组分Alx Ga1 - x As的氧化特性及氧化产物的收缩应力对有源区的影响 ,结合器件结构设计确定了氧化限制层 Alx Ga1 - x-As的铝组分和最佳位置 ,并制备出了低阈值电流的 Al Ga In P系垂直腔面发射激光器
【Abstract】 The characterization of high Al containing AlGaAs oxidized layers and the compressive strain effect of oxide layer on the active region are discussed for the fabrication of visible vertical cavity surface emitting lasers (VCSEL) by wet oxidation and micro photoluminescence spectrum measurement respectively.The optimal position and Al mole fraction of oxide layer are presented.AlGaInP VCSELs with low threshold current are fabricated successfully.
【关键词】 AlxGa1-xAs湿氮选择氧化;
微区光致发光谱;
垂直腔面发射激光器;
【Key words】 Al x Ga 1- x As wet oxidation; micro photoluminescence; VCSEL;
【Key words】 Al x Ga 1- x As wet oxidation; micro photoluminescence; VCSEL;
- 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,2004年05期
- 【分类号】TN248
- 【被引频次】15
- 【下载频次】159