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多缓冲层对MOCVD生长的GaN性能的影响
Multi-Buffer Layers Effect on Characteristic of GaN Grown by MOCVD
【摘要】 采用多低温缓冲层法和高低温联合缓冲层法在 MOCVD系统上生长 Ga N外延膜 .对薄膜进行了 X射线衍射和光致发光谱 (PL)测试 ,(0 0 0 2 ) X射线摇摆曲线和 PL 谱的半高宽与常规的单低温缓冲层法制备的薄膜相比均有不同程度的改善 .实验结果表明改进的缓冲层法能提高 MOCVD生长的氮化镓外延膜晶体质量
【Abstract】 GaN films were grown with different multi buffer layers by MOCVD.X ray diffraction and photoluminence were applied to study the characteristic of GaN films.Compared to GaN film with conventional single low temperature buffer layer,the FWHM of (0002) XRD and PL of GaN films with different multi buffer layers were narrowed.It indicated that these multi buffer layers techniques could improve crystal quality of GaN films.
【基金】 国家自然科学基金(批准号:60 0 770 2 2 ,60 2 760 3 4);国家科技部 863项目(863 -2 0 0 1AA3 13 110,2 0 0 1AA3 13 0 60和 2 0 0 1AA3 13 14 0 );集成光电国家重点实验室开放项目资助~~
- 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,2004年05期
- 【分类号】TN304.23
- 【被引频次】11
- 【下载频次】326