节点文献
多栅GaAs MESFET开关的结构设计
Multi-Gate GaAs MESFET Switch
【摘要】 论述了多栅开关的结构和特点 .针对多栅开关器件结构设计中的参数栅栅间距的选取作了分析 ,确定当栅栅间距等于源漏间距对栅数的平均值时 ,开关性能最优 ,并在实验中得到验证
【Abstract】 The structure and characteristic of multi-gate switch are described.A fundamental problem in switch design is to maintain low insertion loss when improving power handling capacity.Multi-gate switch solves the problem due to its typical structure.The optimality analysis of the distance between gates in the design of triple-gates switches is described.The results are verified by comparing two structures of triple-gate switches with the measured results.
【关键词】 多栅;
开关;
金属半导体场效应晶体管;
砷化镓;
栅栅间距;
【Key words】 multi-gates; switch; MESFET; GaAs; distance between gates;
【Key words】 multi-gates; switch; MESFET; GaAs; distance between gates;
- 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,2004年04期
- 【分类号】TN386
- 【被引频次】1
- 【下载频次】95