【摘要】 采用 Al N插入层技术在 Si(1 1 1 )衬底上实现无微裂 Ga N MOCVD生长 .通过对 Ga N外延层的 a,c轴晶格常数的测量 ,得到了 Ga N所受张应力与 Al N插入层厚度的变化关系 .当 Al N厚度在 7～ 1 3nm范围内 ,Ga N所受张应力最小 ,甚至变为压应力 .因此 ,Ga N微裂得以消除 .同时研究了 Al N插入层对 Ga N晶体质量的影响 ,结果表明 ,许多性能相比于没有 Al N插入层的 Ga N样品有明显提高更多还原

【Abstract】 Crack-free GaN is grown on Si(111) by inserting low temperature AlN interlayer.The .a-,c.-lattice constants are measured by X-ray double crystal diffraction,and the relation between tensile stress in epilayer and the thickness of AlN is obtained.The results show that nearly zero tensile stress and even compressive stress in GaN can be achieved in the range of 7～13nm for the thickness of AlN interlayer.Therefore,cracks in the GaN can be eliminated.The influence of AlN interlayer on GaN quality is also investigated.Compared with the samples without AlN interlayer,many characteristics for those with AlN interlayer are obviously improved.更多还原