【摘要】 利用应力退耦模型 ,分别对多晶硅薄膜晶粒中性区和晶界势垒区的压阻系数进行了理论分析 ,并推导出多晶硅压阻系数的表达式 .实验结果表明 ,利用文中推导出的理论公式所获得的计算值与实验测量结果基本符合 ,所给出的有关多晶硅压阻系数的理论结果可以作为多晶硅特性分析的理论依据 .更多还原

【Abstract】 The piezoresistive coefficients of polysilicon films in monosilicon grains and grain boundaries are theoretically investigated by using stress decouple model.The expressions for the piezoresistive coefficients of polysilicon films are obtained.Consequently,a comparison between the experimental and theoretical results is performed,and a better uniformity is achieved.The presented theory is helpful for theory analysis of the piezoresistive properties of polysilicon.更多还原