【摘要】 介绍了基于共振隧穿二极管的隧穿静态随机存储器的单元结构和原理 .讨论了 n MOS,p MOS和 CMOS作为单元里的选中管的特点 ,综合考虑面积和功耗后 ,发现 n MOS是选中管的最佳选择 .设计了基于 RTD的 TSRAM系统结构 .模拟显示了这种新型存储器具有高集成度、高速和低功耗的优势 .更多还原

【Abstract】 A RTD-based TSRAM cell is introduced.The mechanism of different types of access transistors in this cell is described and NMOS is found most suitable from consideration of the cell size and power consumption.The architecture of a TSRAM system is presented.Simulation results show that the RTD-based TSRAM has advanced characteristics of small area,low power,and high speed.更多还原