节点文献
InP基应变自组装纳米材料及其光电子器件研究进展
The progress in the study of InP based strain induced self-assembly materials and their opto-electronic devices
【摘要】 半导体低维结构材料,如量子线(点)材料,由于其特殊的电子结构,在新一代光电子、微电子器件中有着重要的应用价值。本文对应变自组装InP基量子线(点)材料的生长制备、光学和电学特性及其在半导体激光器、红外探测器及其他光电子和微电子器件中的应用进行了综述,指出了目前需要改进的一些方面,并提出了一些相应的解决途径。
【Abstract】 Due to their special electronic properties,the low dimensional semiconductor materials,such as quantum wires,quantum dots,have important application in the future opto-electronic and micro-electronic devices. In this paper,the growth,optical and electronic properties of strain induced self-assembly nano-materials on InP,and their applications in semiconductor lasers,infrared detectors and other devices are summarized. Suggestions have been presented to improve the quality of these nano-materials and their devices.
【基金】 国家重点基础规划项目(G2000068303);国家自然科学基金项目(60290084)
- 【文献出处】 微纳电子技术 ,Micronanoelectronic Technology , 编辑部邮箱 ,2004年04期
- 【分类号】TN304;TN36
- 【下载频次】217