【摘要】 在对离子敏场效应晶体管(ISFET)基本结构及电学特性分析的基础上,提出了一种基于CMOS技术实现ISFET与信号处理电路集成化的设计方法。模拟仿真的结果表明,所采用的ISFET/MOSFET“互补对”结构的信号读取电路形式能够抑制“温漂”和克服“硅衬底体效应”对器件测量灵敏度的影响,是一种适用于ISFET集成设计的信号读取方式。更多还原

【Abstract】 Based on the ISFET structure and electronic characteristics, a method integratingthe ISFET and signal process circuit realized in an standard CMOS technology are presented. Thesimulation result shows that complementary ISFET/MOSFET pair can eliminate temperature drift andSi substrate bulk effect, which proves it is a suitable readout circuit for ISFET integration.更多还原