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In_1-xGa_xAs_yP_1-y/GaAs组分x和y间约束关系及应用

Constrained Relationship of the x and y for In_1-xGa_xAs_yP_1-y/GaAs and Application

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【Author】 WANG Jian-feng, NIU Nan-hui, GAI Hong-xing, LI bing, HAN Jun, XU Zun-tu, SHEN Guang-di (Beijing University of Technology,Beijing Optoelectronic Technology Laboratory, Beijing 100022,China)

【机构】北京工业大学北京市光电子技术实验室；北京工业大学北京市光电子技术实验室北京100022；北京100022；北京100022；

【摘要】计算出与 GaAs 衬底相匹配的In GaxAsyP1-y 组分 x 和 y 的约束关系,并加以验证;用约束关系 1-x简化带隙与组分x 和 y 函数关系,使之变为单变量y的函数,并给出晶格常数、带隙与组分关系的三维图,并长出材料加以证实。更多还原

【Abstract】 The constrained relationship of the x and y was calculated for In Ga As P which 1-x xy 1-y matched to GaAs substrate, and the results was verified. The relationship between the band-gap is simplified with the fraction of x and y, the single variable function was obtained. After that the 3D relationship of the lattice, band-gap and the fraction were presented. The method was verified with material experiments.更多还原