【摘要】 AlGaN/GaN异质结及其相关器件因其优越的电学特性成为近几年的研究热点。2DEG作为其特征与材料本身的极化现象关系密切。本文主要从晶体微观结构角度介绍AlGaN/GaN异质结极化现象的产生、机理和方向性,着重讨论极化对异质结界面处诱生的二维电子气的影响。极化不仅可提高2DEG的浓度,而且还能使其迁移率得到提高。更多还原

【Abstract】 AlGaN/GaN heterostructure has many characteristics which make it potential forelectronic devices that can be operated under conditions of high voltage, high frequency and hightemperature. 2DEG and polarization phenomena are the most important features of these devices.Based on the crystal structure, the mechanism and direction of polarization is presented. In addition,the characteristics of the 2DEG induced by polarization are reviewed. It is also pointed out thatpolarization can not only increase the concentration of 2DEG, but also improve the electron mobility.更多还原