【摘要】 采用化学腐蚀-金相显微镜法和SEM法观察了CZ法生长的直径50mm的蓝宝石单晶中的位错缺陷。发现位错分布状况为中心较低、边缘较高,密度大约为104~105cm-2。在不同温度不同的试剂以及不同的腐蚀时间进行对比结果发现,用KOH腐蚀剂在290℃下腐蚀15min时,显示的位错最为清晰、准确,效果最佳。更多还原

【Abstract】 Dislocation in CZ Φ50mm sapphire crystal had been observed by chemical etching-metallograph and SEM methods. From the results we found dislocation density was low on the center,while it was high at the edge of the sample. On the whole, dislocation density was about 104~105cm-2.Inaddition, compared the results which were obtained when the enchants and temperature and timevaried. We learn the dislocation was displayed very clearly and accurately when we etch with KOH at290℃ for fifteen minutes. Which was the best condition.更多还原