【摘要】 设计并研制了一种将p n结和有源层分开的高功率AlGaAs/GaAs单量子阱远异质结(SQW RJH)激光器,其发射波长为808nm,腔长为900μm,条宽为100μm。其外延结构与通常的808nmAlGaAs/GaAs单量子阱半导体激光器的结构不同,在p n结和有源区间多了一层0.3μm厚的p型Al0.3Ga0.7As下波导层。对研制的器件进行了电导数测试,结果显示,与常规AlGaAs/GaAs大功率半导体激光器相比,远结半导体激光器具有阈值电流偏大、导通电压偏高的直流特性。经4200h的恒流电老化结果表明,器件在老化初期表现出阈值电流随老化时间缓慢下降,输出功率随老化时间缓慢上升的远结特性。更多还原

【Abstract】 808 nm AlGaAs/GaAs separate confinement heterostructure （SCH）single quantum well remote junction（SQWRJ） lasers with a cavity length of 900 μm and a stripe width of 100 μm are designed and fabricated. Its epitaxial structure is different from the conventional 808 nm AlGaAs/GaAs SQW semiconductor lasers. There is a 0.3 μm thickness p-Al₀.3Ga₀.7As waveguide layer between the p-n junction and active layer. The DC characteristic of RJ laser is measured. Compared with the convertional AlGaAs/GaAs high-power semiconductor laser, the RJ laser shows lager thershold current and threshold voltage. After being aged in constant current LD mode for 4 200 h, the RJ lasers show a slow reduction of threshold current, gradual increase of output power.更多还原