【摘要】 根据改进后的三角势阱场近似,并考虑量子化效应,提出了一种基于物理的阈值电压和栅电容的解析模型,给出了MOSFETs的阈值电压和栅电容的解析表达式,并与经典理论结果进行了比较。更多还原

【Abstract】 Based on the improved approximation of modified triangular potential well, a physical-based model of MOSFETs threshold voltage and gate capacitance is presented, as well as its analytical formulation. The new model accounts for quantum effects for future generation MOS devices and integration circuits. The calculated results of the new model agree with the simulation results very well.更多还原