【摘要】 采用直流磁控溅射法制备SmCo Cr薄膜磁记录材料 ,通过改变Cr底层制备过程中的功率、靶基距、溅射压强和溅射时间 ,得到了磁性能不同的SmCo Cr薄膜。利用X射线衍射法对Cr底层晶面取向和磁控溅射参数之间的关系进行了研究 ,结果表明 :如果改变溅射参数 ,使沉积Cr原子获得较大的能量 ,则有利于Cr底层最终以 ( 110 )晶面择优取向。本实验中Cr底层以 ( 110 )晶面择优取向的最佳实验条件为 :溅射功率在 5 0～ 70W左右 ,靶基距为 6cm ,压强为 0 .5Pa ,溅射时间为 15min。利用振动样品磁强计 (VSM )测定SmCo Cr薄膜的磁学性能 ,结果表明 ,如果Cr底层能以 ( 110 )晶面择优取向 ,所得到的SmCo Cr薄膜的磁学性能较好。更多还原

【Abstract】 SmCo/Cr thin films were prepared by DC magnetron sputtering technique. SmCo/Cr thin films show different magnetic properties when the sputtering parameters of Cr underlayers are changed. XRD measurement was used to study the effect of sputtering parameters on the orientation of Cr underlayers. The results show that Cr atoms with higher energy prefer to orient with (110) planes. In our experiments, the optimal sputtering parameters were: 50～70 W of power, 6cm of the distance from target to substrate, 0.5 Pa of pressure, 15 min of sputtering time. VSM measurements revealed that if Cr underlayers mainly orient with (110) planes, SmCo/Cr thin films will possess better magnetic properties.更多还原