节点文献
直拉重掺硼硅单晶的研究进展
Heavily Boron Doped Czochralski Silicon
【摘要】 系统介绍了直拉重掺硼 (B)硅单晶研究的最新进展。主要内容包括重掺B硅单晶的基本性质 ,利用重掺B籽晶进行无缩颈硅单晶生长技术 ,重掺B硅单晶的机械性能 ,重掺B硅单晶中的氧和氧沉淀 ,以及B的大量掺杂与大直径直拉硅单晶中空洞型 (Void)原生缺陷的控制关系。在此基础上 ,探讨了当前直拉重掺B硅单晶生产和研究中存在的主要问题
【Abstract】 The recent development in heavily B doped CZ silocon was reviewed. The dislocation free crystal growth based on heavily B doped seeds without Dash necking was introduced. The mechanical properties, the oxygen and the void defects of heavily B doped Czochralski silicon were also discussed. Furthermore, some issues to be investigated for heavily B doped silicon were proposed.
- 【文献出处】 稀有金属 ,Chinese Journal of Rare Metals , 编辑部邮箱 ,2003年03期
- 【分类号】TN304.12
- 【被引频次】5
- 【下载频次】239