节点文献
Zn0.85Co0.15O薄膜的制备及其结构分析
Growth and Microstructures of Zn0.85Co0.15 O Films
【摘要】 用电子束蒸镀方法在(100)单晶Si衬底上,生长Zn0.85Co0.15O薄膜,并研究了衬底温度对薄膜质量的影响,结果表明当衬底温度为400℃时,外延膜取向性最好,且其(002)衍射峰半高宽最窄(为0.4834°)。
【Abstract】 Zn0.85Co0.15O Films were grown on Si(100) substrates by reactive electron beam evaporation. Its microstructures were characterized with X-ray diffraction (XRD) .We found that substrate temperature strongly affects the film quality and al a substrate temperature of 400℃highly c-axis oriented grains dominate in the film, with the narrowest(002) X-ray diffraction peak width of (0.4834°).
【关键词】 电子束反应蒸镀;
Zn0.85Co0.15O薄膜;
衬底温度;
微结构;
【Key words】 E-beam evaporation; Zn0.85Co0.15O film; Substrate temperature; Microstructure;
【Key words】 E-beam evaporation; Zn0.85Co0.15O film; Substrate temperature; Microstructure;
【基金】 安徽省自然科学基金(No.00047208)
- 【文献出处】 真空科学与技术 ,Vacuum Science and Technology , 编辑部邮箱 ,2003年05期
- 【分类号】TB43
- 【被引频次】3
- 【下载频次】43