【摘要】 利用俄歇电子能谱(AES)和X射线衍射(XRD)分析了室温条件下离子束外延生长Ga、Mn、As样品,在不同的温度条件下进行退火后组分和元素分布的变化。结果表明退火有助于样品内部元素的均匀分布,温度为400℃会导致MnO2和Ga5.2Mn的结晶。更多还原

【Abstract】 (Ga,Mn,As) samples grown at room temperature by ion beam epitaxy were studied after annealing at different temperatures with the help of Auger electron spectroscopy spectra and X-ray diffraction spectroscopy.The results show that annealing can promote the elements’redistribution and result in new phases’ recrystallization like MnO2 and Ga5.2 Mn at 400℃ .更多还原