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在镍基板上低温生长纳米碳管膜

CARBON NANOTUBE FILMS GROWN ON Ni SUBSTRATE AT LOW TEMPERATURE

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【作者】 王升高汪建华张保华马志斌王传新满卫东

【Author】 WANG Sheng\|gao1, WANG Jian\|hua1, ZHANG Bao\|hua1, WANG Chuan\|xin2, MAN Wei\|dong2 Wuhan Institute of Chemical Technology, Wuhan 430073, China;2. Institute of Plasma Physics, The Chinese Academy of Science, Hefei 220031, China)\;\;

【机构】 武汉化工学院等离子体化学与新材料重点实验室中国科学院等离子体物理研究所中国科学院等离子体物理研究所 湖北武汉 430073湖北武汉 430073安徽合肥 220031安徽合肥 220031

【摘要】 纳米碳管在储能材料和场发射材料等方面具有非常广阔的应用前景。在纳米碳管的许多潜在用途中要求纳米碳管直接低温生长在具有导电能力的基板材料上。以镍片为基板材料,利用微波等离子体化学气相沉积法在低温条件下合成了纳米碳管膜。研究表明,高纯度纳米碳管的低温合成取决于氢等离子体对碳源的有效裂解以及在纳米碳管形成初期对碳素物质的刻蚀。同时,随着微波功率的上升,纳米碳管的纯度上升、生长速率加快且形状变得较直。

【Abstract】 Electron sources and CNTs(carbon nano tubes) negative materials are two of the most promising applications of CNTs in the future. The synthesis of CNTs at low temperature has received a great deal of attention and becomes a challenging issue. Carbon nanotube films were synthesized on Ni substrate by microwave plasma chemical vapor deposition at low temperature. Because of the strong etching ability of hydrogen plasma, high pure carbon nanotubes can be produced at temperature range from 470 ℃ to 510 ℃. The temperature of Ni substrate, which was determined mainly by the plasma intensity, affects the growth of CNTs. At a substrate of 470 ℃, the CNTs are curly, whereas the CNTs were straight at temperature of 510 ℃. The grown rate of CNTs increased with the increase of plasma intensity.\;

【基金】 湖北省教育厅重点资助项目(2002A20008)。
  • 【文献出处】 真空与低温 ,Vacuum and Cryogenics , 编辑部邮箱 ,2003年02期
  • 【分类号】TB383
  • 【被引频次】6
  • 【下载频次】97
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