【摘要】 对集成铁电器件中的关键工艺进行了研究,采用改进的溶胶—凝胶(Sol-Gel)法制备了高品质、(110)择优取向的锆钛酸铅(PZT)铁电薄膜,成功的利用离子束刻蚀(IBE)、反应离子刻蚀(RIE)和湿法腐蚀方法对PZT薄膜进行了刻蚀加工,采用正胶剥离和干法刻蚀工艺实现了金属铂(Pt)电极图形,为集成铁电器件的实现提供了良好的工艺基础。更多还原

【Abstract】 Key processes of integrated ferroelectric devices based on silicon have been studied. High quality and(110) preferential oriented ferroelectric thin films, lead zirconate titanate (PZT), have been prepared using animproved sol-gel method. PZT thin films have been successfully patterned by ion beam etching (IBE), reactiveion etching (RIE) and wet etching. The platinum electrodes have been well patterned by lift-off process and dryetching techniques.更多还原