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溶胶-凝胶法制备掺镧钛酸铅铁电薄膜的研究

La-modified PbTiO₃ Ferroelectric Thin Films Prepared by Sol-Gel Process

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【Author】 WANG Gen-shui~1, LAI Zhen-quan~1,LI Xiao-jun~2,MENG Xiang-jian~1,SUN Jing-lan~1,ZHAO Qiang, LIN Tie, CHU Jun-hao~1,HU Jun~2(1.National Lab.for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China;2.Lab.of Nano-bio-medical, Shanghai Institute of Nuclear Research, Chinese Academy of Sciences, Shanghai 201800, China)

【机构】中国科学院上海技术物理研究所红外物理国家重点实验室；中国科学院上海原子核研究所纳米生物医药研究室；中国科学院上海原子核研究所纳米生物医药研究室上海200083；上海200083；上海200030；上海200030；

【摘要】采用溶胶-凝胶法在Pt/Ti/SiO2/Si衬底上制备了La掺杂的PbTiO3铁电薄膜(PLT),X-射线衍射测量表明PLT薄膜呈高度(100)择优取向,原子力显微镜和扫描电子显微镜测量表明制备的PLT薄膜的表面平整、结构致密。RT66A测量表明PLT薄膜有优良的铁电特性,500kV/cm的外加电场下,剩余极化为10.6μC/cm2,矫顽电场为55kV/cm。用HP4194A分析了薄膜的介电特性。100kHz时的介电常数为652。更多还原

【Abstract】 La modified PbTiO₃ （PLT） ferroelectric thin films have been grown on Pt/Ti/SiO₂/Si substrates by a Sol-Gel process.The microstructure and morphology of the prepared PLT thin films were investigated via X-ray diffractometry and atomic force microscopy techniques. The cross-sectional morphology of PLT thin films was measured by a field emission scanning electron microscopy.PLT thin films show smooth surface morphology, denser structure.At an applied electric field of 500 kV/cm, The remnant polarization （P_r） and coercive field （E_c） of the PLT thin films were obtained from the P-V loop measurements about 10.6 μC/cm₂ and 55 kV/cm, respectively.At a frequency of 100 kHz, the dielectric constant of PLT thin films was obtained by HP4194A measurement about 652.更多还原