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改善（Pb,Ca）TiO₃薄膜的铁电性能研究

Ferroelectric Properties Improvement of （Pb,Ca）TiO₃ Thin Films on Si Substrates Using LaNiO₃ as Bottom Electrodes

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【Author】 TANG LiJun1,2, TANG XinGui3(1Dept.of Physics and Information Engineering Changsha University of Electric Power, Changsha 410077,China;2 Shanghai Institute of Nuclear Research, Chinese Academy of Sciences, Shanghai 201800,China; 3 Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050,China)

【机构】长沙电力学院物理与信息工程；中国科学院上海硅酸盐研究所长沙410077；中国科学院上海原子核研究所；上海201800；上海200050；

【摘要】用溶胶-凝胶法和快速退火工艺在LaNiO3/Si(111)基片制备出高度(100)取向生长的钙钛矿相(Pb0.76Ca0.24)TiO3(PCT)薄膜。用原子力显微镜分析了薄膜的表面形貌;测试了薄膜的铁电和介电特性。PCT薄膜的剩余极化强度和矫顽场分别为9.3μC/cm2和64kV/cm,在100kHz薄膜的介电系数和损耗分别为231和0.045。比较了在不同电极制备PCT薄膜的结果,用LaNiO3作底电极,改善了铁电性,降低了矫顽场。更多还原

【Abstract】 Ferroelectric (Pb076Ca024)TiO3 (PCT) thin films were grown on LaNiO3 (LNO) coated Si(111) substrates by using a SolGel process The highly (100)oriented PCT films on LNO coated Si(111) substrates have been obtained Atomic force microscopy (AFM) revealed that the surface morphology smooth The PCT thin films on LNO coated Si(111) substrates annealed at 600 °C have the remanent polarization (Pr) and coercive electric field (Ec) values were 93 μC/cm2 and 64 kV/cm, respectively At 100 kHz, the dielectric content and dielectric loss of the PCT films on LNO coated Si(111) substrate was 231 and 0045, respectively Compare with Pt/Ti/SiO2/Si substrates, we can find that used LNO as bottom electrode, the ferroelectric properties have been improved更多还原