【摘要】 讨论了CuO添加对BiNbO4微波介质材料的结构和性能的影响。结果表明,添加CuO可促进晶粒生长,使得BiNbO4材料在较低的温度下烧结成瓷,且获得较好的微波介电性能;但添加量不宜过大,过量后Q×f迅速降低。Q×f降低的原因主要与添加后引起的介电弛豫有关,也与添加后第二相的出现及晶粒尺寸减小有关。最佳的CuO的添加量为0.2%(质量比),添加后材料可在920°C烧结,介电性能为:εr≈45(5GHz),Q×f≥10THz。更多还原

【Abstract】 Effect of CuO additive on structure and dielectric properties of BiNbO4 microwave dielectric ceramics was investigated.It shows that small CuO doping can improve crystal growth,lower sintering temperature and increase dielectric constant and value of Q×f.However,with more CuO doping,the value of Q×f decreases quickly.It is mainly due to the relaxation caused by excessive CuO additive.Appearance of the second phase and smaller crystal partcles also result in decreasing of dielectric properties.When doping amount is 02%,ceramics can be sintered at 920 °C with εr about 45 and Q×f more than 10 THz at the frequency of 5 GHz.更多还原