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PECVD在多晶硅上沉积氮化硅膜的研究
Research of Position Siliconritride film on the Poly srystallic Silicorne by PECVD
【摘要】 氮化硅薄膜作为一种新型的太阳电池减反射膜已被工业界认识和应用。应用PECVD(等离子体增强化学气相沉积)系统,以硅烷、氨气和氮气为气源在多晶硅片上制备了具有减反射作用的氮化硅薄膜。并研究了在沉积过程中,衬底温度、硅烷与氨气的流比以及射频功率对薄膜质量的影响。
【Abstract】 As a potential anti-reflective coating, silicon nitride thin film was investigated and applied by the PV industry. By the plasma enhanced chemical vapor deposition system and the reactants of silane and ammonia as well nitrogen, silicon nitride thin film with excellent anti-reflective was prepared. The effects of substrate temperature, the flow ratio of silane over ammonia and the RF power on quality of thin film were studied.
- 【文献出处】 中国稀土学报 ,Journal of The Chinese Rare Earth Society , 编辑部邮箱 ,2003年S1期
- 【分类号】O613
- 【被引频次】7
- 【下载频次】398