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激光分子束外延技术及其在氧化锌薄膜制备中的应用

Laser Molecular Beam Epitaxy and Application in Growth of ZnO Thin Films

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【作者】 王兆阳胡礼中孙捷孟庆端苏英美

【Author】 Wang Zhaoyang~*, Hu Lizhong, Sun Jie, Meng Qingduan, Su Yingmei (Department of Physics, Dalian University of Technology, Dalian 116023, China)

【机构】 大连理工大学物理系大连理工大学物理系 辽宁大连116023辽宁大连116023辽宁大连116023

【摘要】 与金属有机物化学气相沉积和磁控溅射相比,激光分子束外延技术(L MBE)是近年来发展的一种先进的薄膜生长技术,在氧化锌薄膜生长的研究中因其独特的优越性显示出越来越强的竞争力。在讨论ZnO薄膜基本特性的基础上,较为详细地论述了激光分子束外延技术及其在氧化锌薄膜制备中的应用和取得的新进展。

【Abstract】 The preparation of thin films is the basic and center subject of the research of ZnO thin films. The different usages of ZnO thin films demand different crystal orientation, conductivity, piezeoelectricity, optic properties etc. on the film. All these properties are determined by the growth technology and parameters. Compared with metal organic chemical vapor deposition and magnetron sputtering, laser molecular beam epitaxy is an advanced technology developed in recent years and has stronger and stronger competition because of its superior properties. This paper discussed the basic properties of ZnO thin film and introduces the development of the technique of laser molecular beam epitaxy. It also discussed the progress made by this method in this sphere recently.

  • 【文献出处】 中国稀土学报 ,Journal of The Chinese Rare Earth Society , 编辑部邮箱 ,2003年S1期
  • 【分类号】TB43
  • 【被引频次】45
  • 【下载频次】995
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