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Na2S钝化的GaAs表面光荧光特性的研究
Study of photoluminescence character on GaAs surface passivated by Na2S
【摘要】 本文用RPM2050型快速扫描光荧光谱仪(PL Mapper)研究经过Na2S.9H2O醇饱 和溶液钝化处理后GaAs表面的光荧光特性。结果表明,GaAs表面经过硫钝化处理后,可 大大降低复合速度改善发光效率。
【Abstract】 Rapid Photoluminescence Mapper Was used to investigate luminescence efficiency of the GaAs surface,Which was passivated using Na2S. 9H20 alcohol solutions. It Was found that the surface recombination rate of GaAs was reduced and the luminescence efficiency was improved by sulphide passivation.
【关键词】 光荧光谱；
GaAs；
表面硫钝化；
发光效率；
【Key words】 Photoluminescence GaAs PAssivation Luminescence efficiency；
【Key words】 Photoluminescence GaAs PAssivation Luminescence efficiency；
- 【文献出处】 现代仪器 ,Modern Instruments , 编辑部邮箱 ,2003年04期
- 【分类号】O657.3
- 【被引频次】1
- 【下载频次】53