【摘要】 主要讨论了III V族化合物半导体材料氮化镓(GaN)薄膜的制备工艺、掺杂、衬底和缓冲层等相关问题,并提出了目前GaN研究中所面临的主要问题以及氮化镓材料的应用前景。更多还原

【Abstract】 The fabricating techniques for the GaN thin film and related issues,such as the doping,substrate and buffers,are discussed.The main problems in the current research of GaN and its application prospects are also proposed.更多还原