节点文献
极紫外投影光刻掩模技术
Exetreme Ultraviolet Lithography Masks Technology
【摘要】 介绍了掩模基片的技术要求,分析了制备掩模多层膜的难点以及相应的解决措施,然后讲解了吸收层干刻法制备掩模的工艺流程,最后介绍了掩模缺陷的检测技术并概述了极紫外投影光刻掩模技术的现状。
【Abstract】 The requirements for the mask substrate are described and the difficulties for fabricating the mask multilayer and their solutions are analyzed. Then the steps of patterning absorbing layers deposited on top of the multilayer reflectors are explained. Finally, the mask defect inspection technologies and the present status of EUVL mask are introduced.
【关键词】 极紫外;
投影光刻;
多层膜;
掩模;
【Key words】 extreme ultraviolet; projection lithography; multilayers; mask;
【Key words】 extreme ultraviolet; projection lithography; multilayers; mask;
【基金】 国家自然科学基金重点资助项目(69938020);应用光学国家重点实验室基金资助项目
- 【文献出处】 微细加工技术 ,Microfabrication Technology , 编辑部邮箱 ,2003年03期
- 【分类号】TN305
- 【被引频次】3
- 【下载频次】292