【摘要】 以正硅酸乙酯 (TEOS)为原料 ,采用旋转涂敷的方法 ,结合溶胶 凝胶技术在硅衬底上制备超低介电常数多孔SiO2 薄膜 采用两种不同的改性方法对薄膜表面进行改性 ,傅里叶变换红外光谱分析发现改性后薄膜中含有大量的—CH3键 ,从而减少了孔洞塌陷 .用扫描电子显微镜观察薄膜的表面形貌 ,发现薄膜内孔洞尺寸在 70— 80nm之间 调节溶胶pH值 ,发现pH值越小凝胶时间越长 对改性样品热处理的结果表明 ,在 30 0℃时介电常数最低达2 0 5 .更多还原

【Abstract】 Low dielectric constant thin film of nanoporous silica synthesized by sol-gel w as deposited on Si(100) substrate by spin coating. By detecting —CH 3 substitu ted for —OH species, which can avoid the destruction of network, surface modifi cation was identified by Fourier transform infrared spectroscope. The hole size was about 70-80 nm observed from scanning electron microscope. By adjusting t he pH value of the sol, we found that the gel time increased with the decrease of the pH value of the sol. When heating the modified film at different temperature s (60-400 ℃), we can obtain the lowest dielectric constant 2.05 at 300 ℃ .更多还原