【摘要】 以金属W和Ta为热丝 ,采用热丝化学气相沉积 ,在 2 5 0℃玻璃衬底上沉积多晶硅薄膜 .研究了热丝温度、沉积气压、热丝与衬底间距等沉积参数对硅薄膜结构和光电特性的影响 ,在优化条件下获得晶态比Xc>90 % ,暗电导率σd=10 - 7— 10 - 6 Ω- 1 cm- 1 ,激活能Ea=0 5eV ,光能隙Eopt≤ 1 3eV的多晶硅薄膜 .更多还原

【Abstract】 Polycrystalline silicon thin films were prepared by hot-wire chemical vapor deposition (HWCVD) on glass at 250℃,with W or Ta wire as the catalyzers. The structual and optoelectronic properties as functions of the filament temperature, deposition pressure and the filament-substrate distance were studied,and the optimized polycrystalline silicon thin films were obtained with X c>90% (X c denotes the crystalline ratio of the film), crystal grain size about 30—40nm, R d≈0.8nm/s, σ d about 10 -7—10 -6Ω -1cm -1,E a≈0.5eV and E opt≤1.3eV.更多还原