【摘要】 提出了一种直接提取GaInP GaAs异质结双极晶体管 (HBT)小信号模型参数的新方法 .该方法基于HBT器件S参数的测试数据 ,对HBT的小信号模型进行电路网络分析 ,利用S ,Z ,Y参数关系以及电路“抽出”的技巧 ,分别对HBT小信号模型的寄生参数和本征元件参数进行提取 ,建立了一套完整的直接提取HBT小信号模型参数的新方法 .与文献报道HBT小信号模型参数提取的方法相比 ,该方法的优点是 ,提取过程具有简明清晰的物理意义 ,无需建立特殊的测试结构 ,无需引入繁琐的数学优化过程 ,提取速度快 ,并且具有比较好的精度和较宽频带范围的适用性等 .更多还原

【Abstract】 An accurate and broad\|band method for heterojuction bipolar transistors(HBT) small\|signal model parameters is presented in this paper.This method differs from previous ones by extracting the equivalent\|circuit parameters without using special test structure or global numerical optimization techniques.The main advantage of this method is that a unique and physically meaningful set of intrinsic parameters is extracted from impedance and admittance representation of the measured S parameters in the frequency range of 0 5—12GHz under different bias conditions.An equivalent circuit for the HBT under a forward\|bias condition is proposed for extraction of access resistance and parasitic inductance.The method yields a deviation of less then 5% between measured and modeled S parameters.更多还原