【摘要】 使用 90 %N2 稀释的SiH4与O2 作为前驱气体 ,利用微波电子回旋共振等离子体化学气相沉积 (ECR CVD)方法制备了非晶氮氧化硅薄膜 (a -SiOxNy) .红外吸收光谱的结果表明 ,a SiOxNy 薄膜主要由Si O Si和Si N键的两相结构组成 ,在存在氧流量的情形下 ,薄膜主要成分是SiOx 相 ,而在无氧流量的情形下 ,薄膜则主要是SiNx 相 .使用5 65eV的紫外光激发 ,发现SiOxNy 薄膜出现了位于 460nm的光致蓝光主峰 ,且其发光强度随着氧流量的降低而显著增强 .根据缺陷态发光中心和SiNx 蓝光发射能隙态模型 ,讨论了其发光机理 ,认为在低N含量时 ,蓝光发射是由于SiOx 中的氧空位缺陷引起的 ;在高N含量时 ,蓝光发射强度的大幅度增强是由于SiNx 的缺陷态中电子和空穴的辐射复合引起的更多还原

【Abstract】 Amorphous silicon oxygen nitride (a-SiO xN y) films are prepared by microwave electron cyclotron resonance chemical vapor deposition (ECR-CVD) method using 10% SiH 4 in N 2/O 2 mixtures. The Fourier transform infrared absorption spectroscopy shows that the main bonding configuration of the films is Si-O and Si-N. If O 2 is input, the dominant composition of the films is SiO x, while it is SiN x at zero O 2 flow rate. A blue photoluminescence (PL) band at 460nm produced by 5 65eV laser excitation is observed at room temperature from these films, and the emission intensity increases with decreasing O 2 flow rate. The blue PL for a-SiO xN y films, mainly composed of a-SiO x, comes from oxygen deficient defects in the SiO x matrix. For a-SiO xN y films, mainly composed of a-SiN x, its blue PL is due to the electron-hole radiative recombination from the defect states in the SiN x matrix.更多还原