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高质量纳米ZnO薄膜的光致发光特性研究
A study on photoluminescence characterization of high-quality nanocrystalline ZnO thin films
【摘要】 报道了利用低压 金属有机物化学气相沉积技术生长纳米ZnS薄膜 ,然后 ,将ZnS薄膜在氧气中于 80 0℃温度下进行热氧化制备高质量纳米ZnO薄膜 .x射线衍射结果表明 ,纳米ZnO薄膜具有六角纤锌矿多晶结构 .室温下观察到一束强的紫外 (3.2 6eV)光致发光和很弱的深能级发射 .根据激子峰的半高宽度与温度的关系确定了激子 纵向光学声子 (LO)的耦合强度 (ГLO) .由于量子限域效应使ГLO减少较多 .
【Abstract】 In this paper, we report the photoluminescence from high quality nanocrystalline ZnO thin films. The high quality nanocrystalline ZnO thin films are prepared by thermal oxidation of ZnS films at 800℃, which are deposited by low pressure metal organic chemical vapor deposition technique. X ray diffraction indicated that the nanocrystalline ZnO thin films have a polycrystalline hexagonal wurtzite structure. A strong ultraviolet emission peak at 3.26 eV was observed and the deep level emission band was barely observable at room temperature. The strength ( Γ LO ) of the exciton\|longitudinal optical (LO) phonon coupling is deduced from the temperature dependence of the full width at half maximum of the fundamental excitonic peak. Γ LO is reduced greatly due to the quantum confinement effect.
【Key words】 photoluminescence; thermal oxidation; exciton; nanocrystalline ZnO thin film;
- 【文献出处】 物理学报 ,Acta Physica Sinica , 编辑部邮箱 ,2003年03期
- 【分类号】O484.41
- 【被引频次】35
- 【下载频次】451