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MgB2超导薄膜的化学气相沉积
CHEMICAL VAPOR DEPOSITION OF SUPERCONDUCTING MgB2 THIN FILM
【摘要】 探索了采用化学气相沉积法,在LaAlO3单晶基片上原位制备了MgB2超导薄膜。X射线衍射(XRD) 分析表明薄膜的相纯度不理想,扫描电子显微镜(SEM)观察表明薄膜的表面比较粗糙,用标准四引线法测得 薄膜的起始转变温度(Tc onset)为30K,零电阻温度(Tc0)为18K。
【Abstract】 Superconducting MgB2 thin film was successfully in situ deposited onto single crystal LAO (LaAlO3) substrate by chemical vapor deposition. There existed several kinds of impurities in the result-ant thin film by XRD analysis. The surface morphology of this thin film was very rough by SEM observa-tion. The superconducting onset transition temperature and zero resistance temperature of this thin film were confirmed to be 30 K and 18 K, respectively by Standard four-probe measurement.
【关键词】 二硼化镁；
超导薄膜；
化学气相沉积；
原位；
【Key words】 MgB2； superconducting thin film； chemical vapor deposition； in situ；
【Key words】 MgB2； superconducting thin film； chemical vapor deposition； in situ；
【基金】 国家自然科学基金(No.50171058)资助项目
- 【文献出处】 物理测试 ,Physics Examination and Testing , 编辑部邮箱 ,2003年04期
- 【分类号】O484.4
- 【被引频次】5
- 【下载频次】146