【摘要】 建立了慢正电子束注入多孔硅材料的MonteCarlo模型 ,研究了在该材料中不同孔洞的直径、孔洞体积百分比对正电子几率分布的影响 ,得到了相应的正电子深度分布曲线 .同时分析了不同能量正电子平均注入深度的分布 ,通过适当的标度 ,得到了统一描述正电子分布的公式 ,为慢正电子束对多孔材料的实验和理论研究提供有用的数据和计算模型 .更多还原

【Abstract】 We construct the monte carlo mode about slow positron beams implanting porous silicon materials,we have investigated how various void size and the ratio of various void volume to bulk volume effected the distributed probability of positron,gained corresponding positron implatation profiles,At the same time we studied the mean positron implatation depth distributions at various implanting energy.After scaling proprietly,we get a uniform scaling formula which can describ the positron implatation profiles gained by simulation.Our work can provide some useful referential data and a model for the research of porous matevials using slow positron beam technology.更多还原