【摘要】 CuInSe2 (简称CIS)薄膜是太阳电池吸收层的重要材料。利用连续溅射金属层后硒化法制备CuInSe2 薄膜。薄膜的XRD图样显示 :CuInSe2 薄膜的形成与制备条件密切相关 ;在较大Cu、In原子比的范围内 ,在一定的硒化条件下 ,都可以形成以CuInSe2 为基体的薄膜。SEM图样显示 ,不同Cu/In比值的表面形貌有较大的不同。Cu/In接近 1时 ,薄膜的表面形貌均质且颗粒致密。Raman谱图显示 ,Cu、In配比不当会使薄膜中出现少量的杂相组织 ,在 6 32 .8nm激发波波长下 ,还有 2 10cm-1和 2 2 9cm-1两处的特征峰。通过光吸收测量得到CuInSe2 的带隙是 1.0 5eV ,通过电导率测量得到其激活能为 0 .4 86eV。更多还原

【Abstract】 The CIS thin films were fabricated by alloy precursors post selenization.The experimental investigation on the structures and characterizations of CIS thin films were carried out.The XRD analysis reveals that the post selenization temperature is very important for forming a CIS thin film and also the thin films are CIS mainly in a proper selenizing conditions when the range of Cu/In is from 0.98 to 2.34.Raman spectrum analysis reveals that there are 210cm -1 peak and 229cm -1 peak except the 174 cm -1 peak.The 260cm -1 peak shows the character of a Copper rich thin film.The peak position and intensity depend on the ratio of Cu/In.These variations of characteristic peak may be corresponding to heterophase materials.The optical and electrical character measurements were show that the band gap is 1.05eV while Cu/In=0.98.The activity energy is 0.486eV.更多还原