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硼注入金刚石的分子动力学模拟

Molecular Dynamics Simulation of Boron Implantation into Diamond

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【作者】 李荣斌戴永兵胡晓君沈荷生何贤昶

【Author】 LI Rongbin,DAI Yongbing,HU Xiaojun,SHEN Hesheng,HE Xianchang

【机构】 上海交通大学金属基复合材料国家重点实验室上海交通大学金属基复合材料国家重点实验室 上海200030上海200030上海200030

【摘要】 利用Tersoff势和分子动力学方法研究了初始动能为500eV的硼粒子注入金刚石的微观行为.结果表明:单个500eV的硼原子注入后金刚石仍保持长程有序结构;表面层原子向内驰豫,邻近表达层的其他各层原子向外驰豫,表面层与近表层原子的间距减少了15%,而第2层原子与第3层原子之间的间距增加了1.5%;硼原子穿透到表面层下0.4nm处,然后再向表面扩散;表面层产生0.4MPa的压应力.

【Abstract】 Molecular dynamic simulations utilizing the Tersoff manybody potential were used to investigate the microscopic process of 500 eV boron single atom implantation into diamond lattice with a (001) 2×1 reconstructed surface. It shows that the longrange order of diamond lattic remains. The relaxation problems of surface and near surface of diamond (001) were also discussed: the outermost layer atoms relax inward, and other layers atoms relax outward, the distance between the outermost layer atoms and near surface atoms shortens by 15% compared with their original lattice sites. The stresses at surface are compressive, while they vary with the depth in a complex oscillatory. The results of the study are very useful for investigating the particle implantation into diamond.

【关键词】 金刚石离子注入分子动力学
【Key words】 diamondboronparticle implantationmolecular dynamics
【基金】 国家自然科学基金资助项目(50082005)
  • 【文献出处】 上海交通大学学报 ,Journal of Shanghai Jiaotong University , 编辑部邮箱 ,2003年10期
  • 【分类号】TG156.8
  • 【被引频次】2
  • 【下载频次】166
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