【摘要】 研究了退火态 Cr- Si- Al和 Cr- Si- Al- Zr薄膜的微观结构和电性能 .结果表明 ,溅射态非晶薄膜 Cr- Si- Al和 Cr- Si- Al- Zr在加热到 70 0°C的过程中 ,主要析出 2种晶化相 :Cr(Al,Si) 2 和 Si纳米晶化相 ,其中 Cr- Si- Al- Zr薄膜中的晶化相 Cr(Al,Si) 2 包含有少量 Zr原子 .Zr原子的加入抑制了晶化相的形核和长大 ,从而 Cr- Si- Al- Zr薄膜与 Cr- Si- Al薄膜相比 ,需更高的退火温度才能达到趋于零的电阻温度系数 .因此 ,Cr- Si- Al- Zr薄膜具有更好的电学稳定性能 .更多还原

【Abstract】 The microstructure and electrical properties of annealed Cr Si Al and Cr Si Al Zr films were investigated. When sputtered amorphous Cr Si Al and Cr Si Al Zr films were heated up to 700 °C , both of them were found to crystallize into two phases: the nanocrystalline Cr(Al,Si) 2 and Si phase. For Cr Si Al Zr films, zirconium atoms were also found to be dissolved in the crystallization phase Cr(Al,Si) 2 in small amounts. The addition of Zr into amorphous Cr Si Al films inhibited the nucleation and growth of the crystallization phase, resulting in the higher annealing temperatures for Cr Si Al Zr films in comparison with Cr Si Al films to obtain a small temperature coefficient of resistance. As a result, the Cr Si Al Zr films have higher electrical stability.更多还原